| http://www.w3.org/ns/prov#value | - This etch, for example a plasma etch using CF4 and CHF3, in combination, as the active species, preferably also clears the surface of masking layer 11 as shown in FIG. 2c, since the thickness of oxide layer 24 thereover is the approximately the same as its thickness over the bottom portion of wider recess 22' in depression 25.
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