| http://www.w3.org/ns/prov#value | - First, as in FIG. 13A, an 800 nm thick SiO2 film 22 and a 200 nm thick Si3 N4 film 27 were deposited in this order to form an insulating interlayer by a CVD process on a silicon substrate 21 on the surface of which diffusion layers such as a source and a drain (not shown) were formed.
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