| http://www.w3.org/ns/prov#value | - As described in the foregoing, the structures according to the present invention comprise the insulators such as silicon nitride and silicon oxinitride and silicon carbide and aluminum oxide not in direct contact with the channel-forming regions of the MOS. For example, the insulator 105 in FIG. 1 and the insulator 305 in FIG. 3 both can be found only on the drains.
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