| http://www.w3.org/ns/prov#value | - If the p-type impurity concentration of the first nitride semiconductor layer is not lower than 5???1017/cm3, the efficiency of carrier injection into the active layer will be good, and there is a tendency that the light-emission output is improved and Vf is reduced, whereas if it is not higher than 1???1021/cm3, there is a tendency that good crystallinity can be provided with ease.
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