| http://www.w3.org/ns/prov#value | - The method of claim 8 wherein said hydrofluoric acid, HF, solution is a 50:1 mixture of water and HF and having an approximate etch rate of about 55 Angstroms/min. for thermal oxide and an approximate etch rate of about 40 Angstroms/min. for said SiON layer.
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