| http://www.w3.org/ns/prov#value | - 20080206951HIGH PERFORMANCE FIELD EFFECT TRANSISTORS ON SOI SUBSTRATE WITH STRESS-INDUCING MATERIAL AS BURIED INSULATOR AND METHODS - The present invention provides a semiconductor structure that includes a high performance field effect transistor (FET) on a semiconductor-on-insulator (SOI) in which the insulator thereof is a stress-inducing material of a preselected geometry.
|
