| http://www.w3.org/ns/prov#value | - Layer 1122 may be formed of, for example, an insulating material such as silicon oxide or silicon nitride. [0112] All of the layers that have been formed during the processing of the bipolar and MOS portions of the integrated circuit, except for epitaxial layer 1104 but including protective layer 1122, are now removed from the surface of compound semiconductor portion 1022.
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