| http://www.w3.org/ns/prov#value | - Based on providing an MRAM toggle cell according to the third and fourth embodiments of the invention including a free magnetic region provided with a plurality of N ferromagnetic free layers which are antiferromagnetically coupled, where N is an integer greater than or equal to two, such MRAM toggle cell is switched using the first and third quadrants in the IWL-IBL plane.
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