| http://www.w3.org/ns/prov#value | - ethod according to which a negative voltage is applied to the wafer which is a substrate, a reactive gas containing a halogen gas such as of carbon fluoride, hydrogen fluoride or hydrogen chloride is irradiated with a plasma to etch the layer that is to be treated, and has in recent years been chiefly employed as a dry etching featuring excellent anisotropy.
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