About: http://webisa.webdatacommons.org/239352198

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	An insulating film including silicon is formed as the first gate insulating film 511b to have a thickness of 20 nm to 150 nm by a plasma CVD methodor a sputtering method (FIG. 4B).
http://www.w3.org/ns/prov#wasQuotedFrom	patentgenius.com