| http://www.w3.org/ns/prov#value | - In addition, as the p-type semiconductor layer, the n-type semiconductor layer, and the i-type (intrinsic) semiconductor layer, a semiconductor material obtained by a low-pressure thermal CVD method, a plasma CVD method, a sputtering method, or the like, such as silicon or an alloy of silicon-germanium (Si1???XGeX(X=0.0001???0.02)) can be used.
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