| http://www.w3.org/ns/prov#value | - s and strained layers, said strained layers having a higher bandgap energy and including an n-dopant impurity that would dope said base layers p-type if applied to said base layers and that comprises a material other than a Group III-V compound, said base and strained layers being sufficiently thin to enable a charge flow across said junctions. 2.
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