| http://www.w3.org/ns/prov#value | - By means of a thermal treatment, for example at a temperature of approximately 950??? C. for approximately 20 min, which is carried out now or later, the dopant diffuses phosphorous out of the polysilicon layer 1 into part of the second polysilicon layer 5, which leads to redoping of the polysilicon layer 5 via the opening 3.
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