| http://www.w3.org/ns/prov#value | - Further, damage of silicon due to the plasma is reduced by enlarging field of an area which is more than 5 times as thick as an oxide film of an STI sidewall due to a doping density difference during the formation of an STI, wherein the area is an area into which high density of impurity ions are implanted by means of the field stop implant process.
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