| http://www.w3.org/ns/prov#value | - Moreover, especially as shown in FIG. 2 and FIG. 4, the select gate transistor STI of the NAND-type memory cell unit ND1 and the select gate transistor ST2 of the NAND-type memory cell unit ND2 are formed so as to face each other in one trench region 14.
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