| http://www.w3.org/ns/prov#value | - In the case of the addition of the impurity using the gate electrodes as masks as in Embodiment 1, it was not possible to provide,under the gate electrodes, semiconductor regions having added thereto at least one of such impurities as carbon, nitrogen, and oxygen (which regions correspond to the large ba nd gaps designated by numeral 52 in FIG. 5), as is apparent in FIG. 6(D).
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