| http://www.w3.org/ns/prov#value | - In FIG. 2 showing a semiconductor device according to an embodiment of the present invention, reference numeral 1 denotes an insulating substrate formed of SiC ceramics, and 2 denotes a semiconductor element such as IC, LSI, etc. soldered to one surface 11 of the insulating substrate 1 substantially at a center portion thereof by means of an interposed metallic solder layer 3.
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