| http://www.w3.org/ns/prov#value | - removing material from the back-side of the first wafer, after said thinning, to expose the feed-through metallization, wherein removing material from the back-side of the first wafer includes forming cavities in the back-side of the first wafer and partially etching away a buried oxide layer or other isolating etch stop layer to expose the feed-through metallization; and
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