| http://www.w3.org/ns/prov#value | - However, ion implantation for breaking Si???N bonds may be performed simultaneously in the N-channel region 201 and the P-channel region 202, and an element such as carbon (C) and oxygen (O) may be implanted thereafter to the N-channel region 201 and the P-channel region 202 by using the resist masks 514 a, 514 b.
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