| http://www.w3.org/ns/prov#value | - The main surface of the semiconductor substrate 128 is covered with an insulating diaphragm film 132 made of an etching-resistant material in such a manner as to cover the entire surface of the disappearing film 130, and at least one strain gage 34 is provided at a predetermined position in the pressure receiving region of the diaphragm 132.
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