| http://www.w3.org/ns/prov#value | - 20090091035Highly integrated and reliable DRAM and its manufacture - A semiconductor device and its manufacture method wherein the semiconductor substrate has first and second insulating films, the first insulating film being an insulating film other than a silicon nitride film formed at least on a side wall of a conductive pattern including at least one layer of metal or metal silicide, and the s
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