| http://www.w3.org/ns/prov#value | - FIG. 14 is a graph showing how the ratio r changed as the plasma etching proceeded. (In FIG. 14, the value of 100 is given for the ratio r recorded during the period between the 60th second and 100th second points.) As can be understood from FIG. 14, the luminous intensity at 271 nm of CF2 changed by 5.2% for the silicon wafers having the rate of hole area of 10% (see the curve b), and by 1.2% for
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