| http://www.w3.org/ns/prov#value | - Sequentially, when the protection film forming layer 9 a is etched using the resist pattern 21 as a mask, the protection film 9 is formed under the resist pattern 21 as illustrated in FIGS. 3A and 3B. In this case, a surface of the semiconductor thin film forming layer 8 a in the region except the portion under the resist pattern 21 is exposed.
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