| http://www.w3.org/ns/prov#value | - is characterized in that the catalytic element is one kind or a plurality of kinds of elements selected from the group consisting of Fe, Ni, Co, Ru, Rh, Pd, Os, Ir, Pt, Cu, and Au. [0081] Further, the present invention relates to a method of manufacturing a semiconductor device, characterized by comprising: [0082] a first step of forming a semiconductor layer on an insulating surface; [0083] a sec
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