| http://www.w3.org/ns/prov#value | - ion for said bipolar transistor by doping an impurity of a second conductivity type into said collector region; (c) in said first step, an impurity of a first conductivity type is doped into said base region to form an emitter region for said bipolar transistor; and (d) in said second step, nitrogen is doped into an area including at least a portion of said emitter region. 25.
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