| http://www.w3.org/ns/prov#value | - FIG. 2A is a side cross section of an inductively coupled plasma reactor according to a first embodiment of the present invention for ion enhanced processes such as anisotropic etch and plasma enhanced CVD. Referring to FIG. 2A, the reactor, generally indicated at 200, has a plasma generation chamber 216 which has a conically-shaped section 216a and a cylindrical section 216b.
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