| http://www.w3.org/ns/prov#value | - FIG. 1B is a sectional view of the semiconductor device cut substantially along the cutting plane line A-A' of FIG. 1A. The semiconductor device in this embodiment is constructed such that a gate insulting film 13a is formed on the surface of a semiconductor substrate 11 formed with a field oxide film 12 for isolating elements, and a polysilicon film 13b, a gate electrode 13 composed of a titanium
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