| http://www.w3.org/ns/prov#value | - First, carbon has a very low equilibrium solid solubility in Si that is approximately 3.5???1017 atoms.cm???3 (<10???3 atomic %) at its melting point and it is even lower at the typical growth temperatures <1000 C. Second, the presence of carbon contamination on a Si surface is know to disrupt the epitaxial growth and finally, there is a tendency to precipitate silicon carbide (beta-SiC) at high g
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