About: http://webisa.webdatacommons.org/260576989

Property	Value
http://www.w3.org/1999/02/22-rdf-syntax-ns#type	http://www.w3.org/ns/prov#Entity
http://www.w3.org/ns/prov#value	Other aspects of the present invention is a method for fabricating a surrounded base gate of a buried vertical thyristor of a T-RAM cell and a method of making contact with a horizontally stacked pseudo-TFT transfer gate.
http://www.w3.org/ns/prov#wasQuotedFrom	google.com