PropertyValue
http://www.w3.org/1999/02/22-rdf-syntax-ns#type
http://www.w3.org/ns/prov#value
  • A third opening 136 is formed at a position over the capacitor structure 150 through the second insulating layer 130 and the double hydrogen barrier layer 142 by using a method such as photolithography and plasma etching.
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  • google.com