| http://www.w3.org/ns/prov#value | - ion delamination method was developed as a novel film thickness reduction technique as disclosed in Japanese Patent Laid-open (Kokai) Publication No. 5-211128. [0007] This ion implantation and delamination method is a technique for producing an SOI wafer, wherein an oxide film is formed on at least one of two silicon wafers, hydrogen ions or rare gas ions are implanted into one wafer (also called
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