| http://www.w3.org/ns/prov#value | - With such a structure as well, it is possible to make an attempt to obtain compatibility between an increase in coupling ratio ?? of memory cells and reduction of a leakage current at the time of programming/erasing that occurs with an IPD (for example, material with high dielectric constant (high-k)). (6) Others An example of the present invention is not limited to the shapes of a floating gate e
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