| http://www.w3.org/ns/prov#value | - itrided oxide film formed at least at said drain avalanche hot carrier injection region on said main surface of said semiconductor substrate positioned at a region other than a region under said gate electrode, and containing nitrogen at a content not less than 2.5???1020/cm3 and hydrogen at a content less than 3???1020/cm3, said gate electrode, drain avalanche hot carrier injection region and nit
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