| http://www.w3.org/ns/prov#value | - In the method of producing a thin film transistor according to claim 18, the connection electrode is composed of at least one material selected from Al, Cr, Cu, Mo and Ta or metal alloy including at least two of the metals, and the pixel electrode is composed of at least one material selected from indium oxide, tin oxide and ITO, so this method produces effects that a degree of freedom of the layo
|
