| http://www.w3.org/ns/prov#value | - In the etching process of the present invention, other than a gas including chlorine, a gas including a halogen such as fluorine, etc. is used as an atmosphere gas and etching gas, and it is preferable to further include the above described element of Group-IV and Group-VI. According to the results of the examples and the comparative examples described hereinafter, it is further preferable to use
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