| http://www.w3.org/ns/prov#value | - In order to achieve a high mobility by optimizing a formation depth of the buried channel region and improve the step of forming the gate insulation layer, in addition to the first aspect, a second aspect of the present invention is characterized by including a step of forming a buried channel region, a source region and a drain region, a step of forming a gate insulation layer after the step of f
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