| http://www.w3.org/ns/prov#value | - In addition, in the present invention, the barrier layer is formed with two kinds of layers of an n-type In0.02Ga0.98N barrier layer 501 and an undoped In0.02Ga0.98N barrier layer 502, however a layer with slope-like concentration change or a layer with stair-like concentration change is inserted between the two kinds of layers different in concentration of the n-type impurity, and the concentrati
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