| http://www.w3.org/ns/prov#value | - Enumerated as a removing method of the catalytic elements according to the present invention are a method in which a group XV element is selectively added in the crystalline semiconductor film to form a region (film) containing the group XV element, and a heat treatment is applied thereto to have the catalytic elements absorbed in the region containing the group XV element, and a method in which a
|
