| http://www.w3.org/ns/prov#value | - In the present embodiment, the total film thickness of the silicon nitride film or silicon nitride oxide film is especially desired to be 100 nm or less if the configuration of forming the silicon nitride film or silicon nitride oxide film 204, 204A or 204B is employed even within the open region of each pixel, such as the actual examples shown in FIG. 18( a), FIG. 18( b), FIG. 19( a) or FIG. 19(
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