| http://www.w3.org/ns/prov#value | - Another embodiment of the present invention is a manufacturing method of an SOI substrate which is formed as follows: a glass substrate is processed with a solution including chlorine, sulfuric acid or nitric acid; an altered layer is formed on at least one surface of the glass substrate; a single crystal semiconductor substrate is bonded to the altered layer with a second insulating layer, a nitr
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