| http://www.w3.org/ns/prov#value | - In a first embodiment, the method includes providing a semiconductor wafer having a process surface for forming a dielectric insulting layer thereover; depositing according to a CVD process a carbon doped oxide layer the CVD process including an oregano-silane precursor having Si???O groups and Si???Ry groups, where R is an alkyl or cyclo-alkyl group and y the number of R groups bonded to Si; and,
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