| http://www.w3.org/ns/prov#value | - In a following process sequence, silicided contacts 12 to the source region 26 of the semiconductor devices 25, and the substrate contact portion 36 of the SOI layer 29, as well as metal interconnects 77, 78, can be formed to provide the memory device 100 depicted in FIG. 1A. Silicide formation typically requires depositing a refractory metal such as Co, W, Ni or Ti onto the surface of a Si-contai
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