| http://www.w3.org/ns/prov#value | - Another aspect of the present invention is a method of programming a nonvolatile semiconductor memory having first through nth NAND strings arranged in parallel, each NAND string having m memory transistors and first through mth word lines, each coupled to one memory transistor of each NAND string, with a selection transistor at an end of each NAND string in series with the memory transistors of t
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