| http://www.w3.org/ns/prov#value | - In addition to limiting or avoiding oxygen diffusion to the semiconductorsubstrate, the relatively low temperatures employed by atomic layer deposition using ZTB allows for the formation of an amorphous dielectric layer.The thickness of a dielectric layer having an oxide containing Zr and Ti is determined by a fixed growth rate for the pulsing periods and precursors used, set at a value such as N
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