| http://www.w3.org/ns/prov#value | - In order to prevent the TFT layer 103 from being etched, a base insulating film formed over the release layer 102 is preferably formed by a single layered or laminated layered insulating film including oxygen or nitrogen, for example, a silicon oxide (SiOx) film, a silicon nitride (SiNx) film, a silicon oxynitride (SiOxNy) film, a silicon nitride oxide (SiNxOy) film, (x>y) (x, y=1, 2 . . . ), or t
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