| http://www.w3.org/ns/prov#value | - In some embodiments, including the embodiment illustrated in FIG. 1, the electron source layer 34 may include a thin layer of a Group III-nitride material such as AlxGa1-xN (0???x???1) that is highly doped with donor (n-type) dopants, while the hole source layer 30 may include a thin layer of a Group III-nitride material such as AlxGa1-xN (0???x???1) that is highly doped with acceptor (p-type) dop
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