| http://www.w3.org/ns/prov#value | - In the illustrated embodiment, during step 410 a single crystal Si substrate is placed into the single wafer reactor and heated to about 900??? C. for two minutes under flowing ultrapure hydrogen at a pressure of 10 Torr to remove surface contaminants, such as carbon and native oxide. [0114] In the next step 420, the single crystal Si substrate is cooled to a second temperature during a cooling ti
|
