| http://www.w3.org/ns/prov#value | - In the case of the ILD 40, the corresponding silicon and/or germanium oxide film is formed by curing the Group IVA element precursor film in an oxidizing atmosphere (e.g., at a temperature of 300??? C., 350??? C. or 400??? C. or more, but less than the melting temperature of the substrate 10, in the presence of oxygen, ozone, N2O, NO2, or other oxidizing gas, which may be diluted in an inert carri
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