| http://www.w3.org/ns/prov#value | - Another aspect of the present invention is a method for manufacturing an SOI substrate, in which an embrittled layer is formed in a region of a semiconductor substrate at a predetermined depth; the outer edge of the semiconductor substrate is selectively etched to a region at a greater depth than the embrittled layer; an insulating layer is formed over a substrate having an insulating surface; the
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