| http://www.w3.org/ns/prov#value | - Indeed, once the etching and other parameters are determined, according to the present invention, to produce acceptable contact holes, vias, and/or trenches (i.e., contact holes, vias and/or trenches that allow a (semi)conductor layer therein to make the desired electrical connection with the desired underlying layer), the same process parameters (pressure, power, temperature, backside inert gas p
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